econo ipm series 600v / 50a 7 in one-package 7mbp50tea060 features temperature protection provided by directly detecting the junction temperature of the igbts low power loss and soft switching high performance and high reliability igbt with overheating protection higher reliability because of a big decrease in number of parts in built-in control circuit maximum ratings and characteristics absolute maximum ratings (at tc=25c unless otherwise specified) symbol rating unit min. max. bus voltage dc surge short operating collector-emitter voltage *1 collector current dc 1ms duty=76.1% *2 collector power dissipation one transistor *3 collector current dc 1ms forward current diode collector power dissipation one transistor *3 supply voltage of pre-driver *4 input signal voltage *5 input signal current alarm signal voltage *6 alarm signal current *7 junction temperature operating case temperature storage temperature solder temperature *8 isolating voltage (terminal to base, 50/60hz sine wave 1min.) screw torque mounting (m5) v dc v dc(surge) v sc v ces i c i cp -i c p c i c i cp i f p c v cc v in i in v alm i alm t j t opr t stg t sol v iso item 0 0 200 0 - - - - - - - - -0.5 -0.5 - -0.5 - - -20 -40 - - - 450 500 400 600 50 100 50 144 30 60 30 144 20 vcc+0.5 3 vcc 20 150 100 125 260 ac2500 3.5 v v v v a a a w a a a w v v ma v ma c c c c v nm inverter note *1 : vces shall be applied to the input voltage between terminal p and u or ?u or w, n and u or v or w *2 : 125 c /fwd rth(j-c)/(ic x vf max)=125/1.263/(50 x 2.6) x 100=76.1% *3 : pc=125 c /igbt rth(j-c)=125/0.87=144w [inverter] pc=125 c /igbt rth(j-c)=125/0.87=144w [breake] *4 : vcc shall be applied to the input voltage between terminal no.4 and 1, 8 and 5, 12 and 9, 14 and 13 *5 : vin shall be applied to the input voltage between terminal no.3 and 1, 7 and 5, 11 and 9, 16,17,18 and 13. *6 :valm shall be applied to the voltage between terminal no.2 and 1, no6 and 5, no10 and 9, no.19 and 13. *7 : ialmshall be applied to the input current to terminal no.2,6,10 and 19. *8 : immersion time 10 1sec.
7mbp50tea060 igbt-ipm control circuit item symbol condition min. typ. max. unit supply current of p-line side pre-driver(one unit) supply current of n-line side pre-driver input signal threshold voltage (on/off) input zener voltage alarm signal hold time current limit resistor switching trequency : 0 to 15khz tc=-20 to 125c fig.7 on off rin=20k ohm tc=-20c fig.2 tc=25c fig.2 tc=125c fig.2 alarm terminal i ccp i ccn v in(th) v z t alm r alm - - 1.00 1.25 - 1.1 - - 1425 - - 1.35 1.60 8.0 - 2.0 - 1500 18 65 1.70 1.95 - - - 4.0 1575 ma ma v v v ms ms ms ohm protection section ( vcc=15v) turn-on time turn-off time reverse recovery time maximum avalanche energy (a non-repetition) ton vdc=300v,tj=125c toff ic=50a fig.1, fig.6 trr vdc=300v, ic=50a fig.1, fig.6 p av internal wiring inductance=50nh main circuit wiring inductace=54nh thermal characteristics ( tc=25c) item symbol min. typ. max. unit junction to case thermal resistance *9 case to fin thermal resistance with compound rth(j-c) rth(j-c) rth(j-c) rth(c-f) - - 0.87 - - 1.263 - - 0.87 - 0.05 - c/w c/w c/w c/w inverter igbt fwd brake igbt item symbol min. typ. max. unit dc bus voltage operating supply voltage of pre-driver screw torque (m5) v dc v cc - recommendable value over current protection level of inverter circuit over current protection level of brake circuit over current protection delay time sc protection delay time igbt chip over heating over heating protection hysteresis under voltage protection level under voltage protection hysteresis electrical characteristics (at tc=tj=25c, vcc=15v unless otherwise specified.) main circuit item symbol condition min. typ. max. unit collector current at off signal input collector-emitter saturation voltage forward voltage of fwd collector current at off signal input collector-emitter saturation voltage forward voltage of diode i ces v ce(sat) v f i ces v ce(sat) v f v ce =600v vin terminal open. ic=50a -ic=50a terminal chip terminal chip i oc i oc t doc t sc t joh t jh v uv v h tj=125c tj=125c tj=125c tj=125c fig.4 surface of igbt chips 75 - 45 - -5- --8 150 - - -20 - 11.0 - 12.5 0.2 0.5 - a a s s c c v v noise immunity ( vdc=300v, vcc=15v, test circuit fig.5) common mode rectangular noise common mode lightning surge pulse width 1s, polarity ,10minuets judge : no over-current, no miss operating rise time 1.2s, fall time 50s interval 20s, 10 times judge : no over-current, no miss operating 2.0 - - 5.0 - - item symbol condition min. typ. max. unit item condition min. typ. max. unit kv kv - - 400 v 13.5 15.0 16.5 v 2.5 - 3.0 nm item symbol min. typ. max. unit weight weight wt - 270 - g inverter - - 1.0 ma - - 2.5 v - 2.0 - - - 2.6 v - 1.6 - - - 1.0 ma - - 2.2 v - 1.75 - - - 3.3 v - 1.9 - 1.2 - - s - - 3.6 - - 0.3 30 - - mj *9 for 1device, case is under the device brake terminal chip terminal chip v ce =600v vin terminal open. ic=30a -ic=30a
7mbp50tea060 igbt-ipm figure 1. switching time waveform definitions figure 2. input/output timing diagram figure.4 definition of tsc figure 5. noise test circuit figure 7. icc test circuit figure 6. switching characteristics test circuit ic ic i alm tsc i alm i alm ic ic ic i alm tsc i alm i alm ic /vin vge (inside ipm ) fault (inside ipm ) /alm gate off on gate on 2m s ( t yp . ) off normal t alm max . t alm > max . off fault : over-current,over-heat or under-voltage on alarm t alm > 123 /vin vge (inside ipm ) fault (inside ipm ) /alm gate off on gate on 2m s ( t yp . ) off normal t alm max . t alm > max . off fault : over-current,over-heat or under-voltage on alarm t alm > 123 on ton vin ic vin(th) vin(th) 50% toff 10% trr 90% 90% on ton vin ic vin(th) vin(th) 50% toff 10% trr 90% 90% vin dc 15v dc 300v n + l ip m ic p hcpl - 4504 vcc gnd n + ip m p - 20 k vin dc 15v dc 300v n + l ip m ic p hcpl - 4504 vcc gnd n + ip m p - 20 k a vcc vin gnd icc p u v w n p.g +8v fsw ipm dc 15v a vcc vin gnd icc p u v w n p.g +8v fsw ipm dc 15v vccu dc 15v + ip m p u v w n 20k vinu gndu sw1 vcc dc 15v 20k vinx gnd sw2 cooling fin earth ac200 v 4700p noise ct vccu dc 15v + ip m p u v w n 20k vinu gndu sw1 vcc dc 15v 20k vinx gnd sw2 cooling fin earth ac200 v 4700p noise ct
7mbp50tea060 igbt-ipm block diagram outline drawings, mm mass : 270g u v w vcc vinx gnd viny vinz alm b n vindb vccw almw gndw vccv almv gndv p vccu almu gndu vinu vinv vinw pre- driver pre- driver pre- driver pre- driver pre- driver pre- driver pre- driver vz r alm 1.5k r alm 1.5k vz r alm 1.5k vz vz vz vz vz r alm 1.5k pre- driver pre- driver pre- driver pre- driver pre- driver pre- driver pre- driver pre- driver pre- driver pre- driver pre- driver pre- driver pre- driver pre- driver 4 3 2 1 8 6 5 7 12 11 10 9 14 16 13 17 18 15 19 u v w vcc vinx gnd viny vinz alm b n vindb vccw almw gndw vccv almv gndv p vccu almu gndu vinu vinv vinw pre- driver pre- driver pre- driver pre- driver pre- driver pre- driver pre- driver vz r alm 1.5k r alm 1.5k vz r alm 1.5k vz vz vz vz vz r alm 1.5k pre- driver pre- driver pre- driver pre- driver pre- driver pre- driver pre- driver pre- driver pre- driver pre- driver pre- driver pre- driver pre- driver pre- driver 4 4 3 2 1 8 6 5 7 12 11 10 9 14 16 13 17 18 15 19 pre-drivers include following functions 1.amplifier for driver 2.short circuit protection 3.under voltage lockout circuit 4.over current protection 5.igbt chip over heating protection mb cf m package type : p622
igbt-ipm characteristics control circuit characteristics (respresentative) 7mbp50tea060 0 10 20 30 40 50 60 0 5 10 15 20 25 power supply current vs. switching frequency tc=125c n-side p-side power supply current : icc (ma) switching frequency : fsw (khz) vcc=13v vcc=13v vcc=15v vcc=15v vcc=17v vcc=17v 0 0.5 1 1.5 2 2.5 12 13 14 15 16 17 18 input signal threshold voltage vs. power supply voltage inpu t sig nal thres hold voltag e : vin(on),vin(off) (v) power supply voltage : vcc (v) tj=25c tj=125c } vin(on) } vin(off) 0 2 4 6 8 10 12 14 20 40 60 80 100 120 140 under voltage vs. junction temperature under voltage : vuvt (v) ju nc tion tem peratu re : tj (c) 0 0.2 0.4 0.6 0.8 1 20 40 60 80 100 120 140 under voltage hysterisis vs. jnction temperature under voltage hysterisis : vh (v) ju nc tion tem peratu re : tj (c) 0 0.5 1 1.5 2 2.5 3 12 13 14 15 16 17 18 alarm hold time vs. power supply voltage alarm hold time : talm (msec) power supply voltage : vcc (v) tc=100c tc=25c 0 50 100 150 200 12 13 14 15 16 17 18 over heating characteristics tjoh,tjh vs. vcc o ver heating protection : tjoh (c) oh hysterisis : tjh (c) power supply voltage : vcc (v) tjoh tjh
7mbp50tea060 igbt-ipm main circuit characteristics (respresentative) 0 10 20 30 40 50 60 00.511.522.53 collector current vs. collector-emitter voltage tj=25 c (chip) vcc=13v vcc=15v vcc=17v collector current : ic (a) collector-emitter voltage : vce (v) 0 10 20 30 40 50 60 00.511.522.53 collector current vs. collector-emitter voltage tj=25c(terminal) vcc=13v vcc=15v vcc=17v coll ec to r cu rre nt : ic (a) collector-emitter voltage : vce (v) 0 10 20 30 40 50 60 00.511.522.53 collector current vs. collector-em itter voltage tj=125c(chip) vcc=13v vcc=15v vcc=17v collector current : ic (a) collector-emitter voltage : vce (v) 0 10 20 30 40 50 60 00.511.522.53 collector current vs. collector-emitter voltage tj=125c(terminal) vcc=13v vcc=15v vcc=17v collector current : ic (a) collector-emitter voltage : vce (v) 0 20 40 60 80 100 00.511.522.5 forward current vs. forward voltage (chip) 125 c 25c forw ard current : if (a) forward voltage : vf (v) 0 20 40 60 80 100 00.511.522.5 forward current vs. forward voltage (terminal) 125 c 25c forward current : if (a) forward voltage : vf (v)
7mbp50tea060 igbt-ipm 0 1 2 3 4 5 6 0 102030405060 switching loss vs.collector current edc=300v,vcc=15v,tj=25c eon eoff err switch in g loss : eon,eoff,err (m j/cycle) collector current : ic (a) 0 1 2 3 4 5 6 0 102030405060 switching loss vs.collector current edc=300v,vcc=15v,tj=125c eon eoff err switching loss : eon,eoff,err (mj/cycle) collector current : ic (a) 0.01 0.1 1 0.001 0.01 0.1 1 transient thermal resistance thermal resistance : rth(j-c) (c/w) pulse width :pw (sec) fwd igbt 0 50 100 150 0 20 40 60 80 100 120 140 160 power derating for igbt (per device) collecter power dissipation : pc (w) case temperature : tc (c) 0 50 100 150 0 20 40 60 80 100 120 140 160 power derating for fwd (per device) collecter power dissipation : pc (w) case temperature : tc (c)
7mbp50tea060 igbt-ipm 10 100 1000 10000 20 30 40 50 60 70 80 switching tim e vs. collector current edc=300v,vcc=15v,tj=25 c switching time : ton,toff,tf (nsec) collector current : ic (a) toff ton tf 10 100 1000 10000 20 30 40 50 60 70 80 switching time vs. collector current edc=300v,vcc=15v,tj=125 c switching time : ton,toff,tf (nsec) collector current : ic (a) toff ton tf 1 10 100 20 30 40 50 60 70 80 reverse recovery characteristics trr,irr vs.if reverse recovery current:irr(a) reverse recovery time:trr(nsec) fo rw ard cu rren t:if(a) trr125c trr25c irr125c irr25 c
7mbp50tea060 igbt-ipm characteristics dynamic brake characteristics (respresentative) 0 10 20 30 40 50 60 00.511.522.53 collector current vs. collector-emitter voltage tj=25c vcc=13v vcc=15v vcc=17v coll ec to r cu rre nt : ic (a) collector-emitter voltage : vce (v) 0 10 20 30 40 50 60 00.511.522.53 collector current vs. collector-emitter voltage tj=1 25c vcc=13v vcc=15v vcc=17v collector current : ic (a) collector-emitter voltage : vce (v) 0.01 0.1 1 0.001 0.01 0.1 1 transient thermal resistance thermal resistance : rth(j-c) (c/w) pulse width :pw (sec) igbt 0 50 100 150 0 20 40 60 80 100 120 140 160 power derating for igbt (per device) collecter power dissipation : pc (w) case temperature : tc (c)
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